V23990-P541-A21/ C21-PM
final datasheet
Characteristic Values
Parameter
Symbol
V
GE
(V) or
V
GS
(V)
Conditions
V
r
(V) or
V
CE
(V) or
V
DS
(V)
I
C
(A) or I
F
(A)
T(C°)
or I
D
(A)
Min
Value
Typ
Max
Unit
Transistor BRC
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
VCC=480V
Thermal grease
thickness50um
= 0,61 W/mK
15
6
f=1MHz
0
25
Rgon=32 Ohm
Rgoff=16 Ohm
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=VGE
15
0
20
600
0
0.09m
6
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5,8
1,54
1,72
6,5
2,1
0,03
350
none
V
V
mA
nA
Ohm
ns
ns
ns
ns
PWs
PWs
nF
nF
nF
nC
K/W
K/W
10,8
10,8
126
100
0,11
0,17
0,37
0,03
0,01
48
3,06
Diode BRC
Diode forward voltage
Reverse leakage current
Reverse recovery time
Reverse recovered charge
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
r
t
rr
Q
rr
E
rec
R
thJH
R
thJC
Rgon=32 Ohm
Rgon=32 Ohm
Rgon=32 Ohm
Thermal grease
thickness50um
= 0,61 W/mK
0
600
6
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,63
1,56
2,1
60
V
PA
ns
PC
PWs
K/W
K/W
165
0,42
0,09
4,1
NTC Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Type
B-value
R
25
D
R/R
P
B
(25/100)
Tol. ±3%
R100=1503
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
210
3980
23,1
kOhm
%/K
mW
K
Copyright by Vincotech
copyright Tyco Electronics
4
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