V23990-P541-A21/ C21-PM
final datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
V
V
CE(V) or
DS(V)
T(C°)
Min
Max
VGS(V)
Input Rectifier Bridge
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
0,8
1,15
1,1
0,9
0,78
0,008
0,011
1,4
VF
Vto
rt
Forward voltage
30
30
30
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse leakage current
V
Ohm
mA
K/W
K/W
0,02
Ir
1500
RthJH
RthJC
Thermal grease
thicknessꢁ50um
ꢂ = 0,61 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,74
Transistor Inverter
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5,8
6,5
2,1
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
0.09m
6
V
V
15
1,52
1,7
0,06
350
0
600
0
mA
nA
20
none
Ohm
ns
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
10
11
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgoff=16 Ohm
Rgon=32 Ohm
134
116
0,102
15
300
6
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
nF
Eoff
0,18
0,37
Cies
Coss
Crss
QGate
RthJH
RthJC
0
25
25
25
0,03
0,01
48
Output capacitance
f=1MHz
0
nF
Reverse transfer capacitance
Gate charge
0
nF
VCC=480V
6
15
nC
Thermal grease
thicknessꢁ50um ꢂ
= 0,61 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
2,78
K/W
K/W
Diode Inverter
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,64
1,56
2,15
VF
IRM
Diode forward voltage
6
6
6
6
6
V
A
Peak reverse recovery current
Reverse recovery time
Rgon=32 ꢃ
Rgon=32 ꢃ
Rgon=32 ꢃ
Rgon=32 ꢃ
15
15
15
15
300
300
300
300
8,1
163
0,43
trr
ns
Qrr
Reverse recovery charge
Reverse recovery energy
Thermal resistance chip to heatsink per chip
ꢀC
Erec
RthJH
mWs
K/W
0,09
3,68
Thermal grease
thicknessꢁ50um ꢂ
= 0,61 W/mK
RthJC
Thermal resistance chip to case per chip
K/W
Copyright by Vincotech
Revision: 1
copyright Tyco Electronics
3
Revision: 1
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