V23990-K249-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
4500
4500
µ
µ
µ
µ
dIrec/dt
dI0/dt
3600
2700
1800
900
0
3600
2700
1800
900
0
dIrec/dtHigh T
di0/dtHigh T
dI0/dt
dIrec/dt
I C (A)
R gon ( Ω )
0
30
60
90
120
0
10
20
30
40
50
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
125
600
±15
18
°C
V
125
600
50
°C
V
A
V
=
=
V
Rgon
=
VGE =
ꢀ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-5
10-4
10-3
10-2
10-1
100
1011
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
tp / T
0,55
tp / T
1
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
Thermal grease
Thermal grease
R (C/W)
0,08
Tau (s)
1,8E+00
R (C/W)
0,04
Tau (s)
3,5E+01
0,22
2,2E-01
6,3E-02
8,4E-03
6,2E-04
0,10
1,8E+00
2,3E-01
6,3E-02
8,3E-03
8,5E-04
0,16
0,40
0,06
0,40
0,03
0,11
0,07
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8
Revision: 2.1
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