V23990-K249-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
20
20
Qrr
16
16
12
8
Tj = Tjmax -25°C
Tj = Tjmax -25°C
12
8
Qrr
4
4
0
0
0
I C (A)
R g on ( Ω)
0
30
60
90
120
10
20
30
40
50
At
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
125
600
±15
18
°C
V
125
600
50
°C
V
A
V
=
=
V
Rgon
=
VGE =
ꢀ
±15
Figure 15
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
120
120
90
60
30
0
IRRM
Tj = Tjmax -25°C
90
60
30
Tj = Tjmax - 25°C
0
0
I
C (A)
R gon ( Ω )
10
20
30
40
50
0
30
60
90
120
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
125
600
±15
18
°C
V
125
°C
V
A
V
=
600
50
=
V
Rgon
=
VGE =
ꢀ
±15
Copyright by Vincotech
7
Revision: 2.1