V23990-K222-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
D1,D2,D3,D4,D5,D6,D7 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
2000
5000
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
4000
3000
2000
1000
0
1500
1000
500
0
di0/dtHigh T
dIo/dtLow T
dIrec/dtHigh T
dIrec/dtLow T
I C (A)
R gon ( Ω )
0
10
20
30
40
50
60
0
16
32
48
64
80
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/125
25/125
°C
V
25/125
25/125
°C
V
A
V
=
=
300
±15
16
300
30
V
Rgon
=
VGE =
ꢀ
±15
Figure 19
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
D1,D2,D3,D4,D5,D6,D7 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0,0001
0,1
0,05
0,02
0,01
0,005
0,0001
10-2
10-5
10-2
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
101
At
At
tp / T
1,35
tp / T
2,1
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
Thermal grease
Thermal grease
R (C/W)
0,05
Tau (s)
4,4E+00
R (C/W)
0,08
Tau (s)
3,7E+00
0,15
7,2E-01
1,9E-01
5,8E-02
1,4E-02
0,27
4,4E-01
1,1E-01
2,6E-02
6,8E-03
1,2E-03
0,54
0,70
0,36
0,44
0,26
0,35
0,19
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Revision: 3.1
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