V23990-K222-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
5
5
Qrr
4
4
3
2
1
Tj = Tjmax -25°C
Tj = Tjmax -25°C
Tj = 25°C
3
2
1
0
Qrr
Qrr
Tj = 25°C
Qrr
0
0
I C (A)
R gon ( Ω)
0
10
20
30
40
50
60
16
32
48
64
80
At
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/125
25/125
°C
25/125
25/125
°C
V
A
V
=
=
300
±15
16
V
V
ꢀ
300
30
Rgon
=
VGE =
±15
Figure 15
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
80
30
IRRM
Tj = Tjmax -25°C
Tj = 25°C
25
IRRM
60
Tj = Tjmax - 25°C
20
15
10
5
40
20
0
Tj = 25°C
IRRM
IRRM
0
I C (A)
R gon ( Ω )
0
16
32
48
64
80
0
10
20
30
40
50
60
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/125
25/125
°C
25/125
25/125
°C
V
A
V
=
=
300
±15
16
V
V
ꢀ
300
30
Rgon
=
VGE =
±15
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7
Revision: 3.1
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