V23990-K222-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon High T
Eon High T
Eon Low T
Eon Low T
Eoff High T
Eoff High T
Eoff Low T
Eoff Low T
I C (A)
R G ( Ω )
0
10
20
30
40
50
60
0
16
32
48
64
80
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
300
±15
16
V
V
ꢀ
ꢀ
300
±15
30
Rgon
Rgoff
=
=
16
Figure 7
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
T1,T2,T3,T4,T5,T6,T7 IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
1,0
0,8
0,6
0,4
0,2
0,0
1,0
Erec
Tj = Tjmax -25°C
0,8
Tj = Tjmax -25°C
0,6
Tj = 25°C
Erec
Erec
0,4
Tj = 25°C
Erec
0,2
0,0
I C (A)
R G ( Ω )
0
10
20
30
40
50
60
0
16
32
48
64
80
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/125
25/125
°C
25/125
25/125
°C
V
V
A
=
=
=
=
300
±15
16
V
V
ꢀ
300
±15
30
Rgon
=
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5
Revision: 3.1