V23990-K220-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI
0
/dt,dI
rec
/dt = f(I
C
)
4800
di
rec
/ dt (A/
µ
s)
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI
0
/dt,dI
rec
/dt = f(R
gon
)
3000
di
rec
/ dt (A/
µ
s)
D1,D2,D3,D4,D5,D6,D7 FWD
dI
0
/dt
dI
rec
/dt
dI
0
/dt
dI
rec
/dt
4000
2500
dI
rec
/dt
Low T
dI
rec
/dt
High T
2000
3200
2400
1500
dI
o
/dt
Low T
1600
1000
800
500
di
0
/dt
High T
0
0
15
30
45
60
I
C
(A)
75
0
0
15
30
45
60
R
gon
(
Ω
)
75
At
T
j
=
V
CE
=
V
GE
=
R
gon
=
25/150
600
±15
8
°C
V
V
Ǒ
At
T
j
=
V
R
=
I
F
=
V
GE
=
25/150
600
35
±15
°C
V
A
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
Z
thJH
= f(t
p
)
10
1
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
Z
thJH
= f(t
p
)
10
1
D1,D2,D3,D4,D5,D6,D7 FWD
Z
thJH
(K/W)
10
0
10
0
10
-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10
-5
10
-4
Z
th-JH
(K/W)
10
-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10
-4
10
-3
10
-2
10
-1
10
0
10
-2
10
-2
10
-3
10
-2
10
-1
10
0
t
p
(s)
10
10
1
10
-5
t
p
(s)
10
1
10
At
D=
R
thJH
=
t
p
/ T
1
K/W
At
D=
R
thJH
=
t
p
/ T
1,2
K/W
IGBT thermal model values
R (C/W)
0,10
0,31
0,41
0,13
0,03
Tau (s)
1,5E+00
2,7E-01
8,9E-02
1,4E-02
2,8E-03
FWD thermal model values
R (C/W)
0,08
0,33
0,50
0,22
0,10
Tau (s)
2,1E+00
2,4E-01
6,6E-02
1,3E-02
2,3E-03
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Revision: 3.1
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