V23990-K220-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
10
E (mWs)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
10
E (mWs)
T1,T2,T3,T4,T5,T6,T7 IGBT
8
E
on High T
8
E
on High T
6
6
E
on Low T
E
off High T
4
4
E
on Low T
E
off High T
E
off Low T
2
2
E
off Low T
0
0
15
30
45
60
I
C
(A)
75
0
0
15
30
45
60
R
G
(
Ω
)
75
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
8
Ǒ
R
goff
=
8
Ǒ
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
35
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
E (mWs)
3
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
3
E (mWs)
T1,T2,T3,T4,T5,T6,T7 IGBT
2,5
2,5
E
rec
T
j
= T
jmax
-25°
C
2
2
T
j
= T
jmax
-25°
C
E
rec
1,5
1,5
T
j
= 25°
C
E
rec
1
1
T
j
= 25°
C
E
rec
0,5
0,5
0
0
15
30
45
60
I
C
(A)
75
0
0
15
30
45
60
R
G
(
Ω
)
75
With an inductive load at
T
j
=
25/150
°C
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
8
Ǒ
With an inductive load at
T
j
=
25/150
°C
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
35
A
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5
Revision: 3.1
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