V23990-K220-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 13
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
8
6
4
2
0
8
Qrr
Tj = Tjmax -25°C
6
4
2
Tj = Tjmax -25°C
Qrr
Tj = 25°C
Qrr
Tj = 25°C
Qrr
0
0
I
C (A)
R gon ( Ω)
0
15
30
45
60
75
15
30
45
60
75
At
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
±15
8
°C
V
25/150
600
°C
V
A
V
=
=
V
35
Rgon
=
VGE =
Ǒ
±15
Figure 15
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
D1,D2,D3,D4,D5,D6,D7 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
80
50
Tj = Tjmax -25°C
IRRM
Tj = 25°C
IRRM
40
30
20
10
0
60
40
20
Tj = Tjmax - 25°C
Tj = 25°C
IRRM
0
0
I C (A)
R gon ( Ω )
0
15
30
45
60
75
15
30
45
60
75
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
600
±15
8
°C
V
25/150
600
°C
V
A
V
=
=
V
35
Rgon
=
VGE =
Ǒ
±15
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7
Revision: 3.1
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