V23990-K220-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q
rr
= f(I
C
)
8
Q
rr
(
µC)
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q
rr
= f(R
gon
)
8
Q
rr
(
µ
C)
D1,D2,D3,D4,D5,D6,D7 FWD
T
j
= T
jmax
-25°
C
Q
rr
6
6
T
j
= T
jmax
-25°
C
Q
rr
4
4
T
j
= 25°
C
Q
rr
T
j
= 25°
C
2
2
Q
rr
0
0
0
15
30
45
60
I
C
(A)
75
0
15
30
45
60
R
gon
(
Ω)
75
At
At
T
j
=
V
CE
=
V
GE
=
R
gon
=
25/150
600
±15
8
°C
V
V
Ǒ
At
T
j
=
V
R
=
I
F
=
V
GE
=
25/150
600
35
±15
°C
V
A
V
Figure 15
Typical reverse recovery current as a
function of collector current
I
RRM
= f(I
C
)
50
I
rrM
(A)
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I
RRM
= f(R
gon
)
80
I
rrM
(A)
D1,D2,D3,D4,D5,D6,D7 FWD
T
j
= T
jmax
-25°
C
T
j
= 25°
C
I
RRM
I
RRM
40
60
30
40
20
T
j
= T
jmax
- 25°
C
20
10
T
j
= 25°
C
0
0
15
30
45
60
I
C
(A)
75
0
0
15
30
45
60
I
RRM
R
gon
(
Ω
)
75
At
T
j
=
V
CE
=
V
GE
=
R
gon
=
25/150
600
±15
8
°C
V
V
Ǒ
At
T
j
=
V
R
=
I
F
=
V
GE
=
25/150
600
35
±15
°C
V
A
V
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Revision: 3.1
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