V23990-K220-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 9
Typical switching times as a
function of collector current
t = f(I
C
)
1
t (
µs)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R
G
)
1
t (
µs)
T1,T2,T3,T4,T5,T6,T7 IGBT
t
doff
t
don
t
f
t
doff
t
f
0,1
0,1
t
r
t
don
t
r
0,01
0,01
0,001
0
15
30
45
60
I
C
(A)
75
0,001
0
15
30
45
60
R
G
(
Ω
)
75
With an inductive load at
T
j
=
150
°C
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
8
Ǒ
R
goff
=
8
Ǒ
With an inductive load at
T
j
=
150
°C
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
35
A
Figure 11
Typical reverse recovery time as a
function of collector current
t
rr
= f(I
C
)
0,8
t
rr
(
µs)
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t
rr
= f(R
gon
)
0,8
t
rr
(
µ
s)
D1,D2,D3,D4,D5,D6,D7 FWD
t
rr
T
j
= T
jmax
-25°
C
t
rr
0,6
0,6
T
j
= T
jmax
-25°
C
0,4
0,4
T
j
= 25°
C
t
rr
0,2
0,2
T
j
= 25°
C
t
rr
0
0
15
30
45
60
I
C
(A)
75
0
0
15
30
45
60
R
gon
(
Ω
)
75
At
T
j
=
V
CE
=
V
GE
=
R
gon
=
25/150
600
±15
8
°C
V
V
Ǒ
At
T
j
=
V
R
=
I
F
=
V
GE
=
25/150
600
35
±15
°C
V
A
V
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Revision: 3.1
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