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V23990-K220-A40-/0A/-PM 参数 Datasheet PDF下载

V23990-K220-A40-/0A/-PM图片预览
型号: V23990-K220-A40-/0A/-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel]
分类和应用: 局域网功率控制晶体管
文件页数/大小: 17 页 / 2263 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K220-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
100
I
C
(A)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
100
I
C
(A)
T1,T2,T3,T4,T5,T6,T7 IGBT
80
80
60
60
40
40
20
20
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
۷s
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
۷s
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
35
I
C
(A)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
100
I
F
(A)
D1,D2,D3,D4,D5,D6,D7 FWD
T
j
= 25°
C
30
80
25
T
j
= T
jmax
-25°
C
60
20
15
T
j
= T
jmax
-25°
C
40
10
T
j
= 25°
C
5
20
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
1
2
3
4
V
F
(V)
5
At
t
p
=
V
CE
=
250
10
۷s
V
At
t
p
=
250
۷s
Copyright by Vincotech
4
Revision: 3.1