30-F212R6A050SC-M447-E-PM
30-F212R6A050SC01-M447E10-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 13
D1,D2,D3,D4,D5,D6 FWD
Figure 14
D1,D2,D3,D4,D5,D6 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
15
12
9
15
12
9
Qrr
Qrr
Qrr
6
6
Qrr
3
3
0
0
0
0
25
50
75
100
8
16
24
32
40
I C (A)
R gon ( Ω)
At
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
25/150
600
±15
8
25/150
600
=
=
V
50
A
Rgon
=
VGE =
Ω
±15
V
Figure 15
D1,D2,D3,D4,D5,D6 FWD
Figure 16
D1,D2,D3,D4,D5,D6 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
80
60
40
20
0
120
IRRM
90
60
30
IRRM
IRRM
IRRM
0
0
0
25
50
75
100
8
16
24
32
40
I C (A)
R gon ( Ω )
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
25/150
600
±15
8
25/150
600
=
=
V
50
A
Rgon
=
VGE =
Ω
±15
V
Copyright by Vincotech
7
Revision: 1
VINCOTECH [ VINCOTECH ]
