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30-F212R6A050SC01-M447E10 参数 Datasheet PDF下载

30-F212R6A050SC01-M447E10图片预览
型号: 30-F212R6A050SC01-M447E10
PDF下载: 下载PDF文件 查看货源
内容描述: [IGBT4 technology for low saturation losses]
分类和应用: 双极性晶体管
文件页数/大小: 18 页 / 2403 K
品牌: VINCOTECH [ VINCOTECH ]
 浏览型号30-F212R6A050SC01-M447E10的Datasheet PDF文件第1页浏览型号30-F212R6A050SC01-M447E10的Datasheet PDF文件第2页浏览型号30-F212R6A050SC01-M447E10的Datasheet PDF文件第3页浏览型号30-F212R6A050SC01-M447E10的Datasheet PDF文件第5页浏览型号30-F212R6A050SC01-M447E10的Datasheet PDF文件第6页浏览型号30-F212R6A050SC01-M447E10的Datasheet PDF文件第7页浏览型号30-F212R6A050SC01-M447E10的Datasheet PDF文件第8页浏览型号30-F212R6A050SC01-M447E10的Datasheet PDF文件第9页  
30-F212R6A050SC-M447-E-PM  
30-F212R6A050SC01-M447E10-PM  
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6  
Figure 1  
T1,T2,T3,T4,T5,T6 IGBT  
Figure 2  
T1,T2,T3,T4,T5,T6 IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
150  
150  
125  
100  
75  
125  
100  
75  
50  
50  
25  
25  
0
0
0
0
V
CE (V)  
VCE (V)  
1
2
3
4
5
1
2
3
4
5
At  
At  
tp =  
tp =  
250  
25  
µs  
250  
150  
µs  
Tj =  
Tj =  
°C  
°C  
VGE from  
VGE from  
7 V to 17 V in steps of 1 V  
7 V to 17 V in steps of 1 V  
Figure 3  
T1,T2,T3,T4,T5,T6 IGBT  
Figure 4  
D1,D2,D3,D4,D5,D6 FWD  
Typical transfer characteristics  
Typical diode forward current as  
a function of forward voltage  
IF = f(VF)  
IC = f(VGE  
)
50  
150  
125  
100  
75  
40  
30  
20  
10  
50  
25  
0
0
0
2
4
6
8
10  
12  
VGE (V)  
VF (V)  
0
1
2
3
4
5
At  
At  
Tj =  
tp =  
25/150  
250  
°C  
Tj =  
tp =  
25/150  
250  
°C  
µs  
µs  
VCE  
=
10  
V
Copyright by Vincotech  
4
Revision: 1