30-F212R6A050SC-M447-E-PM
30-F212R6A050SC01-M447E10-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 9
T1,T2,T3,T4,T5,T6 IGBT
Figure 10
T1,T2,T3,T4,T5,T6 IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1,00
0,10
0,01
0,00
1,00
0,10
0,01
0,00
tdoff
tdon
tdoff
tdon
tf
tf
tr
tr
I C (A)
R G ( Ω )
40
0
25
50
75
100
0
8
16
24
32
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
150
600
±15
8
°C
V
150
600
±15
50
°C
V
=
=
=
=
V
V
Rgon
Rgoff
=
=
Ω
Ω
A
8
Figure 11
D1,D2,D3,D4,D5,D6 FWD
Figure 12
D1,D2,D3,D4,D5,D6 FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,8
0,6
0,4
0,2
0
0,8
trr
0,6
0,4
0,2
trr
trr
trr
0
0
I C (A)
R gon ( Ω )
0
25
50
75
100
8
16
24
32
40
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
25/150
600
±15
8
25/150
600
=
=
V
50
A
Rgon
=
VGE =
Ω
±15
V
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