10-FZ12NMA080SH-M269F
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Neutral Point IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
0,0008
50
V
V
1,1
1,54
1,75
15
100
650
0
600
0
uA
nA
ꢀ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
99
102
10
Rise time
13
ns
183
206
80
td(off)
tf
Turn-off delay time
Rgon=8 ꢀ
Rgoff=8 ꢀ
±15
350
41
Fall time
99
0,49
0,72
1,16
1,50
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
3140
200
93
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
15
480
50
310
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,30
K/W
Half Bridge FWD
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,5
2,23
1,91
3,4
VF
Ir
Diode forward voltage
30
41
V
ꢁA
100
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
350
64
79
29
172
2,7
6,1
8246
4626
0,74
1,79
IRRM
trr
A
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=8 ꢀ
±15
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,55
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
T=25°C
22000
ꢀ
%
ꢂR/R R100=1486 ꢀ
-5
5
P
200
2
mW
mW/K
K
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
3950
3996
B-value
K
Vincotech NTC Reference
B
copyright by Vincotech
4
Revision: 4
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