10-FZ12NMA080SH-M269F
datasheet
Buck
half bridge IGBT and neutral point FRED
Figure 17
FRED
Figure 18
FRED
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
10000
8000
6000
4000
2000
0
18000
dIrec/dtLow T
dIrec/dtHigh T
15000
12000
9000
6000
3000
0
dIo/dtLow T
di0/dtHigh T
dIrec/dtHigh T
dI0/dtLow T
dI0/dtHigh T
I C (A)
0
8
16
24
32
R gon (W) 40
0
20
40
60
80
At
At
Tj =
Tj =
VCE
VGE
25/125
350
±15
2
°C
V
25/125
°C
V
A
V
=
=
VR =
350
40
IF =
VGE
V
Rgon
=
=
ꢀ
±15
Figure 19
IGBT
Figure 20
FRED
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
0,1
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-5
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
1011
At
D =
At
tp / T
0,60
tp / T
1,61
D =
R
thJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FRED thermal model values
R (C/W)
0,10
Tau (s)
1,7E+00
2,4E-01
6,7E-02
8,5E-03
5,6E-04
R (C/W)
0,06
Tau (s)
9,8E+00
1,1E+00
1,8E-01
3,3E-02
5,6E-03
3,8E-04
0,28
0,30
0,16
0,80
0,04
0,28
0,02
0,11
0,07
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