10-FZ12NMA080SH-M269F
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Neutral Point IGBT
VCE
IC
Collector-emitter break down voltage
DC collector current
600
V
A
Th=80°C
Tc=80°C
36
46
Tj=Tjmax
ICpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
150
A
Th=80°C
Tc=80°C
56
85
W
V
±20
tSC
Tj≤150°C
6
µs
V
VCC
VGE=15V
360
Tjmax
Maximum Junction Temperature
175
°C
Half Bridge FWD
Tj=25°C
VRRM
IF
Peak Repetitive Reverse Voltage
DC forward current
1200
V
A
A
Th=80°C
Tc=80°C
25
35
Tj=Tjmax
Surge forward current
IFSM
325
440
70
tp=8,3ms , sin 180°
T c=25°C
I2t
A2s
A
I2t-value
IFRM
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
20kHz Square Wave
Tj=Tjmax
Th=80°C
Tc=80°C
45
68
Ptot
W
°C
Tjmax
150
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
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Revision: 4
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