10-FU073AA030SM-PF04H06
datasheet
Negative Neutral Point Switching Characteristics
figure 33.
FWD
figure 34.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 35.
FWD
figure 36.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
60
50
40
30
20
10
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
11 Jul. 2022 / Revision 1
VINCOTECH [ VINCOTECH ]
