7N60
TYPICAL CHARACTERISTICS
On-Region Characteristics
V
GS
15.0V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm :5.5V
Top:
Power MOSFET
Transfer Characteristics
Drain Current, I
D
(A)
10
1
10
0
Drain Current, I
D
(A)
10
1
10
0
150℃
25℃
10
-1
2
-55℃
*Notes:
1. V
DS
=50V
2. 250μs Pulse Test
6
8
10
10
-1
10
-1
*Notes:
1. 250μs Pulse Test
2. T
C
=25℃
10
1
10
0
Drain-Source Voltage, V
DS
(V)
4
Gate-Source Voltage, V
GS
(V)
On-Resistance Variation vs. Drain Current
and Gate Voltage
Drain-Source On-Resistance, R
DS(ON)
(Ω)
Body Diode Forward Voltage Variation vs
.
Source Current and Temperature
Reverse Drain Current, I
DR
(A)
2.5
2.0
1.5
1.0
0.5
*Note: T
J
=25℃
0.0
0
5
10
15
20
25
V
GS
=10V
V
GS
=20V
10
1
10
0
*Notes:
25℃ 1. V
GS
=0V
2. 250μs Pulse Test
0.6
0.8
1.0
1.2
150℃
10
-1
0.2
0.4
Drain Current, I
D
(A)
Source-Drain Voltage, V
SD
(V)
Capacitance Characteristics
2000
1800
C
iss
1000
800
C
rss
400
0
C
oss
*Notes:
1. V
GS
=0V
2. f = 1MHz
C
iss=
C
g
s+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
10
2
I
D,
Drain Current (A)
Maximum Safe Operating Area
Operation in This Area
is Limited by R
DS(on)
100μs
1ms
10ms
10
0
*Notes:
1. Tc=25℃
2. T
J
=150℃
3. Single Pulse
10
1
DC
Capacitance (pF)
10
1
10
-1
10
0
10
1
10
-1
10
0
10
2
10
3
Drain-SourceVoltage V
DS
(V)
,
Drain-Source Voltage, V
DS
(V)
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