7N60
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
AR
Power MOSFET
RATINGS
Drain-Source Voltage
600
Gate-Source Voltage
±30
Avalanche Current (Note 1)
7.4
T
C
= 25°C
7.4
I
D
Continuous Drain Current
T
C
= 100°C
4.7
Pulsed Drain Current (Note 1)
I
DM
29.6
Avalanche Energy, Single Pulsed (Note 2)
E
AS
580
Avalanche Energy, Repetitive Limited by T
J(MAX)
E
AR
14.2
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
Power Dissipation (T
C
= 25℃)
142
P
D
Derate above 25℃
1.14
Junction Temperature
T
J
+150
Operating and Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
SYMBOL
θ
JA
θ
JC
θ
CS
MIN
TYP
MAX
62.5
0.88
UNIT
°C/W
°C/W
°C/W
0.5
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
BV
DSS
TEST CONDITIONS
MIN
600
10
100
100
-100
0.67
2.0
6.4
1400
180
21
70
170
140
130
38
4.0
1.0
TYP MAX UNIT
V
µA
µA
nA
nA
V/℃
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0V, I
D
= 250µA
V
DS
= 600V, V
GS
= 0V
I
DSS
V
DS
= 480V, T
C
= 125°C
I
GSSF
V
GS
= 30V, V
DS
= 0V
I
GSSR
V
GS
= -30V, V
DS
= 0V
△BV
DSS
/
I
D
= 250µA, Referenced to
△T
J
25°C
V
GS(TH)
V
DS
= V
GS
, I
D
= 250µA
R
DS(ON)
V
GS
= 10V, I
D
= 3.7A
g
FS
V
DS
= 50V, I
D
= 3.7A (Note 4)
C
ISS
C
OSS
C
RSS
t
d(ON)
t
R
t
d(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
=25V, V
GS
=0V, f=1.0 MHz
V
DD
=300V, I
D
=7.4A, R
G
=25Ω
(Note 4, 5)
29
7
14.5
V
DS
=480V, I
D
=7.4A, V
GS
=10 V
(Note 4, 5)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-076,B
UTC-IC [ UNISONIC TECHNOLOGIES ]
