7N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 7.4 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode Forward
I
SM
Current
Reverse Recovery Time
t
RR
V
GS
= 0V, I
S
= 7.4 A,
d
IF
/ dt = 100A/µs (Note 4)
Reverse Recovery Charge
Q
RR
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19.5mH, I
AS
= 7.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
7.4A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Power MOSFET
MIN
TYP MAX UNIT
1.4
7.4
29.6
320
2.4
V
A
A
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-076,B
UTC-IC [ UNISONIC TECHNOLOGIES ]
