50N06
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Junction Temperature
Power MOSFET
Drain-Source On-Resistance, R
DS(ON)
,
(Normalized)
Drain-Source Breakdown Voltage,
BV
DSS
(Normalized)
1.2
1.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
On-Resistance Variation vs.
Junction Temperature
1.0
0.9
0.8
150 200
-100 -50
0
50 100
Junction Temperature, T
J
(°C)
*Note:
1. V
GS
=0V
2. I
D
=250µA
*Note:
1. V
GS
=10V
2. I
D
=25A
-50
0
50
100
150
Junction Temperature, T
J
(°C)
Maximum Safe Operating
10
3
Operation in This
Area by R
DS (on)
Drain Current , I
D,
(A)
10
2
10
1
*Note:
1. T
c
=25°C
2. T
J
=150°C
-1
3. Single Pulse
10
10
0
10
-1
Drain Current, I
D
(A)
100µs
1ms
10ms
10ms
50
40
30
20
10
0
Maximum Drain Current vs.
Case Temperature
10
0
10
1
10
2
Drain-Source Voltage, V
DS
(V)
25
75
50
100
125
Case Temperature, T
C
(°C)
150
Thermal Response, Z
θJC
(t)
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