50N06
ELECTRICAL CHARACTERISTICS(Cont.)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DD
= 30V, I
D
=25 A,
Turn-On Rise Time
t
R
R
G
= 50Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 48V, V
GS
= 10 V
Gate-Source Charge
Q
GS
I
D
= 50A (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
I
S
= 50A, V
GS
= 0 V
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
I
S
= 50A, V
GS
= 0 V
dI
F
/ dt = 100 A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature
Power MOSFET
40
100
90
80
30
9.6
10
60
200
180
160
40
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
1.5
50
200
54
81
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