4N65
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
10
8
1200
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
VDS=300V
VDS=480V
1000
800
Ciss
Notes:
1. VGS=0V
VDS=120V
Coss
6
600
400
200
2. f = 1MHz
4
2
Crss
Note: ID=4A
10
Total Gate Charge, QG (nC)
0
0
0.1
20
25
0
5
15
1
10
Drain-SourceVoltage, VDS (V)
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