4N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
650
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
4.4
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
16
A
EAS
260
mJ
mJ
V/ns
Avalanche Energy
EAR
10.6
4.5
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-262/TO-263
dv/dt
106
TO-220F/TO-220F1
TO-220F2
36
Power Dissipation
PD
W
38
TO-251/ TO-252
50
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Note:
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2
SYMBOL
RATINGS
62.5
62.5
62.5
83
UNIT
Junction to Ambient
Junction to Case
θJA
°С/W
TO-251/ TO-252
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2
1.18
3.47
3.28
2.5
θJc
°С/W
TO-251/ TO-252
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-397.F
www.unisonic.com.tw
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