4N60
TYPICAL CHARACTERISTICS(Cont.)
On-Resistance Variation vs Drain
.
Current and Gate Voltage
6
5
4
3
2
1
0
0
Note: T
J
=25℃
Power MOSFET
On State Current vs. Allowable Case
Temperature
Reverse Drain Current, I
DR
(A)
Drain-Source On-Resistance,
R
DS(ON)
(ohm)
10
150℃
25℃
1
Notes:
1. V
GS
=0V
2. 250µs Test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, V
SD
(V)
Gate Charge Characteristics
12
V
GS
=20V
V
GS
=10V
6
8
10 12
2
4
Drain Current, I
D
(A)
Capacitance Characteristics
(Non-Repetitive)
1200
1000
Capacitance (pF)
Gate-Source Voltage, V
GS
(V)
C
iss=
C
gs
+C
gd
(C
ds
=shorted )
C
oss
=C
ds
+C
gd
C
rs s
=C
gd
10
8
6
4
2
0
C
iss
C
oss
Notes:
1. V
GS
=0V
2. f = 1MHz
V
DS
=300V
V
DS
=480V
V
DS
=120V
800
600
400
200
0
0.1
C
rss
1
Note: I
D
=4A
0
5
10
15
20
25
10
Drain-SourceVoltage V
DS
(V)
,
Total Gate Charge, Q
G
(nC)
Transient Thermal Response
Curve
1
Thermal Response,
θ
JC
(t)
Power Dissipation
120
100
80
0.1
Notes :
1.
θ
J C
(t) = 1.18℃/ W Max.
2. Duty Factor , D=t 1/t2
3. T
J M
-T
C
=P
DM
×θ
JC
(t)
P
D
(w)
60
40
20
0.01
1E-5
1E-4 1E-3 0.01 0.1
1
10
Square Wave Pulse Duration t
1
(sec)
,
0
0 20 40 60 80 100 120 140 160
T
C
(°C)
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