4N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
AR
Power MOSFET
RATINGS
UNIT
Drain-Source Voltage
600
V
Gate-Source Voltage
±30
V
Avalanche Current - (Note 1)
4.4
A
T
C
= 25°C
4.0
A
I
D
Continuous Drain Current
T
C
= 100°C
2.8
A
Pulsed Drain Current, T
P
Limited by T
JMAX
- (Note 1)
I
DM
16
A
Avalanche Energy, Single Pulsed (Note 2)
E
AS
260
mJ
Avalanche Energy, Repetitive, Limited by T
JMAX
E
AR
10.6
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation (T
C
= 25°C)
P
D
106
W
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
SYMBOL
θ
JA
θ
JC
θ
CS
MIN
TYP
MAX
62.5
3
UNIT
°C/W
°C/W
°C/W
0.5
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
MIN TYP MAX UNIT
600
10
100
100
-100
0.6
2.0
4.0
520
70
8
13
45
25
35
15
3.4
7.1
670
90
11
35
100
60
80
20
4.0
2.5
V
µA
µA
nA
nA
V/℃
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
△
BV
DSS
/△T
J
I
D
= 250 µA, Referenced to 25°C
V
GS(TH)
R
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
DD
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 2.2 A
V
DS
= 50 V, I
D
= 2.2 A (Note 4)
V
DS
= 25 V, V
GS
= 0 V, f = 1MHz
V
DD
= 300V, I
D
= 4.0 A, R
G
= 25Ω
(Note 4, 5)
V
DS
= 480V,I
D
= 4.0A, V
GS
= 10 V
(Note 4, 5)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-061,E
UTC-IC [ UNISONIC TECHNOLOGIES ]
