4N60
TYPICAL CHARACTERISTICS
Power MOSFET
Drain-Source Breakdown Voltage,
BV
DSS
(Normalized)
Drain-Source On-Resistance,
R
DS(ON)
(Normalized)
Breakdown Voltage Variation vs
.
Temperature
1.2
1.1
1.0
0.9
Note:
1. V
GS
=0V
2. I
D
=250µA
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50
0
50 100 150 200
Note:
1. V
GS
=10V
2. I
D
=4A
0.8
-100 -50 0
50 100 150 200
Junction Temperature, T
J
(℃)
Junction Temperature, T
J
(℃)
Maximum Drain Current vs. Case
Temperature
5
Drain Current, I
D
(A)
Maximum Safe Operating Area
Operation in This Area is Limited by
R
DS(on )
Drain Current, I
D
(A)
10
100
µs
1ms
10ms
4
3
2
1
0
25
50
75 100 125
Case Temperature, T
C
(℃)
1
0.1
1
Notes:
1. T
J
=25
℃
2. T
J
=150℃
3. Single Pulse
DC
10
100
1000
Drain-Source Voltage, V
DS
(V)
On-State Characteristics
10
Drain Current, I
D
(A)
Drain Current, I
D
(A)
V
GS
10V
9V
8V
7V
6V
5.5V
5V
Bottorm :5.0V
Top :
Transfer Characteristics
10
25℃
1
150℃
1
5.0V
0.1
Notes:
1. 250µs Pulse Test
2. T
C
=25℃
0.1
Notes:
1. V
DS
=50V
2. 250
µs
Pulse Test
0.1
1
10
Drain-to-Source Voltage, V
DS
(V)
4
6
8
10
2
Gate-Source Voltage, V
GS
(V)
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