1N60A_09 参数 Datasheet PDF下载

1N60A

ABSOLUTE MAXIMUM RATINGS

(

T

C

= 25°C, unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

600

650

±30

0.5

2

50

Power MOSFET

UNIT

1N60A-A

V

Drain-Source Voltage

V

DSS

1N60A-B

V

Gate-Source Voltage

V

GSS

V

Continuous Drain Current

I

D

A

Pulsed Drain Current (Note 2)

I

DM

A

Single Pulse(Note 3)

E

AS

mJ

Avalanche Energy

Repetitive(Note 2)

E

AR

3.6

4.0

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation (T

C

=25°C)

3

W

P

D

Derate above 25°C

25

mW/°C

Junction Temperature

T

J

+150

°C

Operating Temperature

T

OPR

-55 ~ +150

°C

Storage Temperature

T

STG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=92mH, I

AS

=0.8A, V

DD

=50V, R

G

=0Ω, Starting T

J

=25°C

4. I

SD

≤1.0A,

di/dt≤100A/μs, V

DD

≤BV

DSS

, Starting T

J

=25°C

THERMAL DATA

PARAMETER

Junction to Ambient

SYMBOL

θ

JA

MIN

TYP

MAX

120

UNIT

°C/W

ELECTRICAL CHARACTERISTICS

(T

J

=25°C, unless otherwise specified.)

PARAMETER

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

1N60A-A

1N60A-B

SYMBOL

BV

DSS

I

DSS

TEST CONDITIONS

V

GS

= 0V, I

D

= 250μA

MIN TYP MAX UNIT

600

650

10

100

-100

0.4

2.0

11

4.2

15

100

20

3

12

11

40

18

8

1.8

4.0

34

32

90

46

10

V

V

μA

nA

nA

V/°C

V

Ω

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

Breakdown Voltage Temperature

Coefficient

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

DS

= 600V, V

GS

= 0V

Forward

V

GS

= 20V, V

DS

= 0V

I

GSS

Reverse

V

GS

= -20V, V

DS

= 0V

I

D

= 250μA

△BV

DSS

/

△

T

J

referenced to 25°C

V

GS(TH)

R

DS(ON)

C

ISS

C

OSS

C

RSS

t

D (ON)

t

R

t

D (OFF)

t

F

Q

G

Q

GS

Q

GD

V

DS

= V

GS

, I

D

= 250μA

V

GS

= 10V, I

D

= 0.5A

V

DS

=25V, V

GS

=0V, f=1MHz

V

DD

=300V, I

D

=0.5A, R

G

=5Ω

(Note 1,2)

V

DS

=480V, V

GS

=10V, I

D

=0.8A

(Note 1,2)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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