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1N60A_09 参数 Datasheet PDF下载

1N60A_09图片预览
型号: 1N60A_09
PDF下载: 下载PDF文件 查看货源
内容描述: 0.5安培, 600/650伏特N沟道MOSFET [0.5 Amps, 600/650 Volts N-CHANNEL MOSFET]
分类和应用:
文件页数/大小: 8 页 / 224 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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UNISONIC TECHNOLOGIES CO., LTD
1N60A
0.5 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC
1N60A
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
=15Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (C
RSS
= 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N60AL-x-T92-B
1N60AG-x-T92-B
1N60AL-x-T92-K
1N60AG-x-T92-K
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-091,E