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18N40G-TA3-T 参数 Datasheet PDF下载

18N40G-TA3-T图片预览
型号: 18N40G-TA3-T
PDF下载: 下载PDF文件 查看货源
内容描述: 18A , 400V N沟道功率MOSFET [18A, 400V N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 151 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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18N40
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current vs. Source to Drain Voltage
12
10
Drain Current,I
D
(A)
8
6
4
2
0
0
400
600
200
800 1000
Source to Drain Voltage,V
SD
(mV)
12
10
Drain Current, I
D
(A)
8
6
4
2
0
0
Drain-Source On-State Resistance
Characteristics
V
GS
=10V,
I
D
=9.0A
2.0
1.5
1.0
0.5
Drain to Source Voltage, V
DS
(V)
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
Drain Current,I
D
(µA)
250
Drain Current,I
D
(µA)
0
2
3
1
4
Gate Threshold Voltage,V
TH
(V)
200
150
100
50
0
300
250
200
150
100
50
0
200
100
300
400
500
0
Drain-Source Breakdown Voltage,BV
DSS
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-389.E