18N40
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
Drain-Source Leakage Current
I
DSS
V
DS
=400V, V
GS
=0V
Gate-Body Leakage Current
I
GSS
V
DS
=0V, V
GS
=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=10V, I
D
=9A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=0.5V
DSS
,
Gate Source Charge
Q
GS
I
D
=18A, R
G
=5Ω (Note 1, 2)
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
GS
=10V, V
DS
=0.5V
DSS
,
I
D
=9A (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
F
=I
S
,V
GS
=0V
Maximum Continuous Drain-Source
I
S
V
GS
=0V
Diode Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Repetitive
Forward Current
Reverse Recovery Time
t
rr
V
GS
=0V, dI
F
/dt=100A/µs,
I
S
=18A, V
R
=100V (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
Notes:
2. Essentially independent of operating temperature
MIN
400
Power MOSFET
TYP
MAX UNIT
V
µA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
1.5
18
72
200
V
A
A
ns
µC
25
±100
2.0
0.18
2500
280
23
50
15
18
21
22
62
22
4.0
0.24
0.8
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