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18N40G-TA3-T 参数 Datasheet PDF下载

18N40G-TA3-T图片预览
型号: 18N40G-TA3-T
PDF下载: 下载PDF文件 查看货源
内容描述: 18A , 400V N沟道功率MOSFET [18A, 400V N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 151 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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18N40
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
(T
C
=25°С, unless otherwise specified)
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
dv/dt
Power MOSFET
RATINGS
UNIT
400
V
±30
V
Continuous
18
A
Drain Current
Pulsed
72
A
Avalanche Current
18
A
Single Pulsed
1000
mJ
Avalanche Energy
30
mJ
Repetitive
Peak Diode Recovery dv/dt
10
V/ns
TO-220
235
Power Dissipation
TO-220F1
P
D
W
38.5
TO-247
360
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Case
TO-220
TO-220F1
TO-247
SYMBOL
θ
JC
RATINGS
0.53
3.3
0.35
UNIT
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-389.E