CHE1260
Electrical Characteristics
Tamb = +25° VDC = +4.5V (on DC_I and DC_R)
C,
Symbol
F
IL
Cd
Dr
Pr
Parameter
Frequency range
Insertion Loss
Coupler Directivity
Dynamic Range
Power Range:
10 - 17GHz
17 - 21GHz
21 - 24GHz
24 - 27GHz
(for transmitted and/or reflected power)
Vdetect_I
Voltage detection from transmitted power
Vref_I – Vdet_I
From Pr_min to Pr_max
Vdetect_R Voltage detection from reflected power
Vref_R – Vdet_R
From Pr_min to Pr_max
RLin
RLout
VDC
IDC
Input return loss
Output return loss
Bias Voltage
Bias Current (on ports DC_I or DC_R)
-1
-3
-6
-8
10-27GHz Detector
Min
10
Typ
Max
27
Unit
GHz
dB
dB
dB
0.8
13
30
dBm
20
to
2500
20
to
2500
-11
-11
4.5
33
dB
dB
V
µA
mV
mV
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports but with 100kΩ resistor in parallel on pads Vdet_I, Vref_I, Vdet_R and
Vref_R (see notes, page 8).
Absolute Maximum Ratings
(1)
Tamb = +25°
C
Symbol
VDC
Top
Tstg
P_max
Parameter
Bias voltage (on ports DC_I and DC_R)
Operating temperature range
Storage temperature range
Maximum power (for transmitted and/or reflected power)
Values
6
-40 to +85
-55 to +125
30
Unit
V
°
C
°
C
dBm
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHE1260-8058 - 28 Feb 08
2/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
