CHE1260
RoHS COMPLIANT
10-27GHz Bidirectionnal Detector
GaAs Monolithic Microwave IC
Description
The CHE1260 is a bidirectionnal detector
that integrates a passive bidirectionnal
coupler, two matched detection diodes and
two reference diodes.
It allows the measurement of transmitted and
reflected power. It is designed for a wide
range of applications where an accurate
transmitted power control is required,
typically
commercial
communication
systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
It is available in chip form.
Incident power detection (mV)
10000
10GHz
12GHz
27GHz
17GHz
Vref_R DC_R
Vdet_R
RF_in
RF_out
Vdet_I
DC_I
Vref_I
Main Features
■
Wide frequency range 10-27GHz
■
Bidirectionnal detection
■
30dB dynamic range
■
ESD protected
■
Chip size: 1.41 x 1.41 x 0.1 mm
■
BCB layer protection (see page 8)
Vref_I - Vdet_I (mV)
22GHz
1000
100
10
-15 -13 -11 -9 -7 -5 -3 -1
1
3
5
7
9 11 13 15 17 19 21 23 25 27 29
Incident power (dBm)
Main Characteristics
Tamb = +25° VDC = +4.5V (on DC_I and DC_R)
C,
Symbol
F
IL
Dr
Parameter
Frequency range
Insertion Loss
Dynamic Range
Min
10
0.8
30
Typ
Max
27
Unit
GHz
dB
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHE1260-8058 - 28 Feb 08
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
