CHA7114
Electrical Characteristics
X-band High Power Amplifier
Tamb = 25° Vd = 8V, Id (Quiescent) = 2A, Pulse wi dth = 25µs, Duty cycle=10%
C,
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency
8.5
11.5
GHz
G
Small signal gain
17.5
20
23
dB
G_T
Small signal gain variation versus
-0.033
dB/°
C
temperature
RLin
Input Return Loss
8
10
dB
RLout
Output Return Loss
6
8
dB
Psat
Saturated output power
39.8
dBm
Psat_T
Saturated output power variation
-0.008
dB/°
C
versus temperature
P_4dBc
Output power @ 4dBc (2)
38
39
dBm
PAE_4dBc
Power Added Efficiency @ 4dBc
36
42
%
Id
Supply drain current
2.3
2.6
A
Vd1, Vd2
Drain supply voltage (2)
8.0
8.5
V
Id_q
Supply quiescent drain current (1)
2.0
A
Vg1, Vg2
Gate Power supply voltage
-4.0
V
Top
Operating temperature range
-40
+80
°
C
(1) Parameter to be adjusted by tuning of Vg
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Symbol
Absolute Maximum Ratings (1)
Tamb = 25°
C
Symbol
Cmp
Vd
Id
Id_sat
Vg
Tj
Tstg
(1)
Parameter
Compression level (2)
Drain Power supply voltage (3)
Drain Power supply quiescent current
Drain Power supply current in saturation
Gate Power supply voltage
Maximum junction temperature (4)
Storage temperature range
Values
6
10
2.5
3
-8
175
-55 to +125
Unit
dB
V
A
A
V
°
C
°
C
Operation of this device above anyone of these parameters may cause permanent
damage.
(2)
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5 V / dBc
(3)
Without RF input power
(4)
Equivalent Thermal Resistance to Backside: 5.6°C/W for backside temp. of 80°
C.
[ Junction Temperature comes from: Tj = Tbackside + ETRB x (Dissipated Power)
Where
ETRB
stands for
Equivalent Thermal Resistance
to
Backside.
]
Ref. : DSCHA7114-7347 - 13 Dec 07
2/8
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
