CHA7114
X Band High Power Amplifier
GaAs Monolithic Microwave IC
Vg2 Vd2
Description
The CHA7114 is a monolithic two-stage
GaAs high power amplifier designed for X
band applications.
This device is manufactured using a UMS
0.25 µm power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
•
The backside of the chip is both RF and
DC grounded
•
Bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermo-compression
bonding process.
Vg1 Vd1
IN
OUT
Vg1 Vd1
Vg2 Vd2
50
Pout (dBm) & PAE (%) & Gain (dB)
45
40
35
30
25
20
15
Pulse : 25µs 10%
10
8
8,5
9
9,5
10
10,5
11
11,5
12
Frequency (GHz)
Linear Gain
Pout @ 4dBc
PAE @ 4dBc
Main Features
0.25µm Power pHEMT Technology
8.5–11.5GHz Frequency Range
8W Output Power @ 4dBc
High PAE: > 40% @ 4dBc
20dB nominal Gain
Quiescent Bias point: Vd = 8V, Id = 2A
Chip size: 4.41mm x 3.31mm x 0.07mm
Main Characteristics
Tamb = +25° (Tamb is the back-side of the chip)
C
Vd = 8V, Id (Quiescent) = 2A, Pulse width = 25µs, Duty cycle = 10%
Symbol
Top
Fop
P_4dBc
G
Parameter
Operating temperature range
Operating frequency range
Output power @ 4dBc @ 25°
C
Small signal gain @ 25°
C
Min
-40
8.5
Typ
Max
+80
11.5
Unit
°
C
GHz
W
dB
8
20
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA7114-7347 - 13 Dec 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax : +33 (0) 1 69 33 03 09