X-band High Power Amplifier
Assembly recommendations
CHA7010
For thermal and electrical considerations, the chip should be brazed on a metal base plate.
The RF, DC and modulation port inter-connections should be done according to the following table:
Port
IN (24)
OUT (12)
Vc (5, 10, 14, 19)
Vctr (3, 8, 16, 21)
Connection
Inductance (Lbonding) = 0.4nH
Inductance (Lbonding) = 0.4nH
Inductance ~ 1nH
Inductance ~ 1nH
External capacitor
C1 ~ 100pF
C2 ~ 10nF
C3 ~220 nF
C1 ~ 100pF
Ref. DSCHA70104054 - 23 Feb 04
6/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
