CHA7010
RoHS COMPLIANT
X-band GaInP HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The
CHA7010
is a monolithic two-stage
GaAs high power amplifier designed for X
band applications.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridges. A nitride
layer protects the transistors and the
passive components. Special heat removal
techniques are implemented to guarantee
high reliability.
To simplify the assembly process:
•
the backside of the chip is both RF and
DC grounded
•
bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermosonic or
thermocompression bonding process.
Vctr
Vctr
Vc
Main Features
10W output power
High gain : > 18dB @ 10GHz
High PAE : > 35% @ 10GHz
On-chip bias control
Linear collector current control
High impedance interface for pulse
mode
Temperature compensated
Chip size: 4.74 x 4.36 x 0.1 mm
Vc
Input
Matching
Network
Inter-stage
Output
Combiner
Vctr
Vc
Vctr
Vc
Main Characteristics
Tamb = +25°C
Symbol
F_op
P_sat
P_1dBc
G_lin
Parameter
Min
8.4
Typ
9.4
10
8
18
1/7
Max
10.4
Unit
GHz
W
W
dB
Operating frequency range
Saturated output power
Output power @ 1dBc
Linear gain
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA70104054 - 23 Feb 04
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
