X-band High Power Amplifier
Typical measured characteristics
CHA7010
Measurements in test fixture :
Tamb=25°C, Vc=9V, Ic (Quiescient) = 2.4A, Pulse width=80µs , Duty cycle = 30%
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8,4
8,6
8,8
3900
3700
3500
3300
3100
2900
2700
Pout @ pin = 27 dBm
Pae @ pin = 27 dBm
gain @ pin = 27 dBm
Ic @ pin = 27 dBm
P_out(dBm), Pae(%), Gain(dB)
2500
2300
2100
1900
1700
1500
9
9,2
9,4
9,6
9,8
10
10,2
10,4
Frequency (GHz)
Saturated output power, PAE, Gain and collector current versus frequency
Ref. DSCHA70104054 - 23 Feb 04
4/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Collector current (mA)
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
