CHA6005-99F
Electrical Characteristics
8-12GHz High Power Amplifier
Tamb.= +25°C, Vd = +8V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Operating frequency
8
12
GHz
G
Small signal gain
22
dB
dBS11
Input Return Loss
13
dB
dBS22
Output Return Loss
10
dB
P1dB
Output power @ 1dBcomp
31.5
dBm
P3dB
Output power @ 3dBcomp
32.5
dBm
PAE
Power Added Efficiency @ 3dBcomp
39
%
Id_3dBc
Supply drain current @ 3dBcomp
500
mA
Vd1, 2
Drain supply voltage
8
V
Id
Supply quiescent current
350
mA
Vg
Gate supply voltage
-1
V
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A bonding wire of typically 0.25 to 0.3nH will improve the matching at the accesses.
Ref. : DSCHA60052244 - 31 Aug 12
2/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
