CHA6005-99F
Recommended assembly plan
8-12GHz High Power Amplifier
25µm wedge bonding is preferred
Note: Equivalent RF Wire Bonding: 0.25nH (typical length of 200µm for a 25µm diameter
wire).
Recommended circuit bonding table
Port
IN
OUT
VG
VD
Connection
Inductance (Lbonding) = 0.3nH
400µm length with a wire diameter of 25 µm
Inductance (Lbonding) = 0.3nH
400µm length with a wire diameter of 25 µm
Inductance
1nH
Inductance
1nH
C1 ~ 120pF, C2 ~ 10nF
C1 ~ 120pF
External capacitor
Ref. : DSCHA60052244 - 31 Aug 12
8/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
