CHA6005-99F
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6005-99F is a high power amplifier
monolithic circuit, which integrates two
stages and produces 32.5dBm output power
associated to a high power added efficiency
of 38%.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Linear Gain (dB) & Pout @ ~ 3dBcomp
Main Features
■ High power : 32.5dBm
■ High PAE : 38%
■ Frequency band : 8-12GHz
■ Linear gain : 22dB
■ DC bias: Vd=8Volt@Id=350mA
■ Chip size 3x1.5x0.1mm
34
600
32
30
28
26
24
22
20
18
8
8.5
9
9.5
10
10.5
11
11.5
12
Linear Gain (dB)
Pout @ Pin=14 dBm (3dBcomp)
Idrain @ Pin=14 dBm (3dBcomp)
550
500
450
400
350
300
250
200
Freq (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq
Frequency range
G
Linear Gain
P1dB
Output Power @ 3dB comp.
PAE
Power Added Efficiency @ 3dB comp.
Min
8
Typ
22
31.5
38
Max
12
Unit
GHz
dB
dBm
%
Ref. : DSCHA60052244 - 31 Aug 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Idrain @ ~ 3dBcomp (mA)
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
