17-27GHz High Power Amplifier
Typical Measured Performance
On JIG measurement:
Tamb = +25° Vd = +4.5V, Id = 890mA
C,
C/I3 versus Single Carrier Level Output Power at 25°
C
54
52
50
48
46
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
9
10
CHA5056
C/I3 (dBc)
17 GHz
19 GHz
20 GHz
21 GHz
23 GHz
25 GHz
26 GHz
27 GHz
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Single Carrier Level Output Power (dBm)
C/I3 versus Temperature at 20GHz
53
51
49
47
45
43
41
C/I3 (dBc)
39
37
35
33
31
29
27
25
23
21
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
Single Carrier Level Output Power (dBm)
-40°C
+25°C
+75°C
Ref: DSCHA50567211 - 30 Jul 07
5/8
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
