CHA5056
Electrical Characteristics
17-27GHz High Power Amplifier
Tamb. = 25° Vd = 4,5V and Id = 890mA, CW biasing mode. These values are representative of
C;
on wafer measurements.
Symbol
Fop
G
P1dB
Parameter
Operating frequency range
Small signal gain
Pulsed output power at 1dB compression (1)
Min
17
Typ
Max
27
Unit
GHz
dB
dBm
21
29
S11
S22
OIP3
Vd 1,2,3
Vg 1-2,3
Id
Id1dB
Input return loss
Ouput return loss
Output IP3
DC Drain Voltage
DC Gate Voltage
Small Signal Bias current (2)
Bias current at 1dB compression
2.0:1
2.2:1
39
4.5
-1.7
890
940
dBm
V
V
mA
mA
(1) These values are representative for pulsed on-wafer measurements that are made without bonding wires
at the RF ports.
(2) This parameter is fixed by gate voltage Vg.
Absolute Maximum Ratings
Tamb. = 25° (1)
C
Symbol
Vd
Id
Vg
Pin
Tch
Ta
Tstg
Parameter
Maximum Drain bias voltage
Maximum Small Signal Bias current
Gate bias voltage
Maximum input power overdrive
Maximum channel temperature
Operating temperature range
Storage temperature range
Values
+5
1100
-4 to +0.8
+13.0
+175
-40 to +85
-55 to +125
Unit
V
mA
V
dBm
°
C
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref: DSCHA50567211 - 30 Jul 07
2/8
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
