CHA5056
RoHS COMPLIANT
17-27GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5056 is three-stage monolithic high
power amplifier.
The backside of the chip is both RF and DC
grounds. This helps to simplify the assembly
process.
The circuit is manufactured with a power PHEMT
process, 0.15µm gate length, via holes through
the substrate.
It is supplied in chip form.
P1dB and Linear Gain versus Frequency
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
16
17
18
19
20
21
22
23
24
25
26
27
28
Frequency (GHz)
Vd1
RFin
Vd2
Vd3
RFout
Vg1,2
Vg3Vd3
■
Broadband performance 17-27GHz
■
21dB Linear Gain
■
ESD protected
■
29dBm Output Power @1dB compression
■
DC power consumption @1dB compression:
940mA@4.5V
■
Chip size: 3.15 x 2.2 x 0.1mm
G a in (d B ) & P 1 d B (d B m )
Main Features
Typical On Wafer Measurement
Main Characteristics
Tamb. = 25° Vd = 4.5V
C,
Symbol
Fop
Parameter
Operating frequency range
Small signal gain
Output power @ 1dB gain compression
Drain current @ 1dB gain compression
Min
17
Typ
Max
27
Unit
GHz
dB
dBm
mA
G
P1dB
Id1dB
21
29
940
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref: DSCHA50567211 - 30 Jul 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
