CHA3689
Typical Measured Performance
Tamb = +25° Vd1=Vd2=Vd3= +4V
C,
12.5-30GHz Low Noise Amplifier
Id = 90 mA
/
Id = 120 mA for pads B, D = GND
Measurements on wafer (without bonding wires at the RF ports)
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
10
12
14
Gain and Return Losses @ 90 mA
S21
Gain & Return Losses (dB)
S11
S22
16
18
20
22
24
26
28
30
32
Frequency (GHz)
5
4,5
4
3,5
Noise figure versus frequency @ 90 mA
NF (dB)
3
2,5
2
1,5
1
0,5
0
10
12
14
16
18
20
6/10
22
24
26
28
30
32
Frequency (GHz)
Ref. : DSCHA36897082 - 23 Mar 07
/Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
