CHA3689
12.5-30GHz Low Noise Amplifier
Electrical Characteristics (low current configuration)
These values are representative on wafer measurements that are made without bonding wires
at the RF ports.
Tamb = +25° Vd1=Vd2=Vd3= +4V
C,
Symbol
Fop
G
∆G
NF
Pads B, D = not connected
Min
12.5
23
20
26
22
±2.5
±2
1.8
2.0
3.0:1
2.0:1
2.5:1
23
13
24
14
90
4
120
2.3
2.5
3.5:1
2.5:1
3.0:1
dBm
dBm
mA
V
Parameter
Operating frequency range
Gain (12.5 - 24GHz)
Gain (24.5 - 30GHz)
Gain flatness (12.5 - 24GHz)
Gain flatness (24.5 - 30GHz)
Noise figure (12.5 - 24GHz)
Noise figure (24.5 - 30GHz)
Typ
Max
30
Unit
GHz
dB
dB
dB
dB
dB
dB
S11
Input return loss (12.5 - 16GHz) (27 - 30GHz)
Input return loss (16 - 27GHz)
S22
OIP3
P1dB
Id
Vd
Output return loss
3rd order intercept point (18 – 30GHz)
Output power at 1dB gain compression
Drain bias current
Drain bias voltage
Electrical Characteristics (high current configuration)
Tamb = +25° Vd1=Vd2=Vd3 = +4V
C,
Symbol
Fop
G
∆G
NF
Pads B, D = GND
Min
12.5
24
21
27
23
±2.5
±2
1.9
2.1
3.0:1
2.0:1
2.5:1
25
14
26
15
120
4
2/10
Parameter
Operating frequency range
Gain (12.5 - 24GHz)
Gain (24.5 - 30GHz)
Gain flatness (12.5 - 24GHz)
Gain flatness (24.5 - 30GHz)
Noise figure (12.5 - 24GHz)
Noise figure (24.5 - 30GHz)
Typ
Max
30
Unit
GHz
dB
dB
dB
dB
2.4
2.6
3.5:1
2.5:1
3.0:1
dB
dB
S11
Input return loss (12.5 - 16GHz) (27 - 30GHz)
Input return loss (16 - 27GHz)
S22
OIP3
P1dB
Id
Vd
Output return loss
3rd order intercept point (18 – 30GHz)
Output power at 1dB gain compression
Drain bias current
Drain bias voltage
dBm
dBm
150
mA
V
Ref. : DSCHA36897082 - 23 Mar 07
/Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
